...-equilibrium phonon distribution function and compare predictions from this model with data for ballistic transport in silicon. The solution to the steady-state transport equations for bulk silicon transistors shows that energy stagnation at the hotspot results in an excess equivalent temperature rise of about...

... not account adequately for phonon dispersion or polarization. In this study, the problem of a hot spot in a submicron silicon-on-insulator transistor is addressed. A model based on the BTE incorporating full phonon dispersion effects is used. A structured finite volume approach is used to solve the BTE...

...Sreekant V. J. Narumanchi; Jayathi Y. Murthy; Cristina H. Amon In compact transistors, large electric fields near the drain side create hot spots whose dimensions are smaller than the phonon mean free path in the medium. In this paper, we present a study of unsteady hot spot behavior. The unsteady...

... to be carefully examined for semiconductor devices in which the channel length is comparable with or smaller than the phonon mean free path. The phonon mean free path in silicon at room temperature is near 300 nm and exceeds the channel length of contemporary transistors. This work numerically integrates the two...