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Keywords: silicon-on-insulator
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Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. September 2009, 131(9): 092401.
Published Online: June 22, 2009
... in the channel region of a silicon-on-insulator (SOI) transistor. The effect of the silicon layer thickness of the SOI transistor on phonon thermal characteristics is also investigated. It is found that the thickness effect on the peak temperature of the optical phonon mode in the hot spot region is negligible...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Heat Mass Transfer. July 2007, 129(7): 790–797.
Published Online: September 19, 2006
...Rodrigo A. Escobar; Cristina H. Amon Lattice Boltzmann method (LBM) simulations of phonon transport are performed in one-dimensional (1D) and 2D computational models of a silicon-on-insulator transistor, in order to investigate its transient thermal response under Joule heating conditions, which...
Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Heat Mass Transfer. July 2005, 127(7): 713–723.
Published Online: March 1, 2005
... not account adequately for phonon dispersion or polarization. In this study, the problem of a hot spot in a submicron silicon-on-insulator transistor is addressed. A model based on the BTE incorporating full phonon dispersion effects is used. A structured finite volume approach is used to solve the BTE...
Journal Articles
Per G. Sverdrup, Y. Sungtaek Ju, Associate Mem. ASME, Kenneth E. Goodson, Associate Professor, Associate Mem. ASME
Publisher: ASME
Article Type: Technical Papers
J. Heat Mass Transfer. February 2001, 123(1): 130–137.
Published Online: June 25, 2000
...-dimensional phonon Boltzmann transport equation (BTE) within the silicon region of a silicon-on-insulator (SOI) transistor. The BTE is solved together with the classical heat diffusion equation in the silicon dioxide layer beneath the transistor. The predicted peak temperature rise is nearly 160 percent...