... and is capable of high-temperature operation over 800 ° C . As a thermometer, reliable temperature measurement is achieved by calibrating the resistance variation versus temperature after the annealing process is applied. The thermally oxidized layer on the silicon substrate is around 1 - μ m -thick and pinhole...

... a strong barrier to heat transfer rather than to the changes of the intrinsic thermal conductivity due to the nanometer thickness of the layers. We show that the influence of the first few interfaces on the overall thermal resistance is higher than the subsequent ones. Annealing the multilayered samples...