Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam to direct write a custom pattern with nanometric accuracy. Due to the very limited e-beam field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment.

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