This paper studied the stress generation in the deposition process of multilayer polycrystalline films by physical vapor deposition. A stress prediction model was proposed which is capable of describing the generation of both the intrinsic stress and thermal stress by analyzing heat/mass transfer and growth process during the deposition process. An alternative deposition of Cu and Ag layers on Si (100) was simulated. The thermal stress in the multilayer system was discussed in detail by analyzing the influence of different parameters on thermal stress, such as deposition temperature and film thickness. It is found that the thermal residual stress strongly depends on the deposition temperature and film thickness ratio and thus the thermal stress can be modified by adjusting the related parameters.
- Heat Transfer Division
Heat Transfer in Physical Vapor Deposition of Polycrystalline Multilayers and Residual Stress
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Zhang, S, Zhang, H, Zheng, L, Wu, N, & Ma, Y. "Heat Transfer in Physical Vapor Deposition of Polycrystalline Multilayers and Residual Stress." Proceedings of the ASME 2013 Heat Transfer Summer Conference collocated with the ASME 2013 7th International Conference on Energy Sustainability and the ASME 2013 11th International Conference on Fuel Cell Science, Engineering and Technology. Volume 4: Heat and Mass Transfer Under Extreme Conditions; Environmental Heat Transfer; Computational Heat Transfer; Visualization of Heat Transfer; Heat Transfer Education and Future Directions in Heat Transfer; Nuclear Energy. Minneapolis, Minnesota, USA. July 14–19, 2013. V004T14A013. ASME. https://doi.org/10.1115/HT2013-17349
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